Raising the Bar for RF Components
Unlock the full potential of next-generation wireless communications.
AVAILABLE NOw
For sales inquires contact sales@falcomm.io
Power Amplifiers
Our proprietary PA designs lead the industry, delivering unmatched efficiency and linearity from sub-GHz to mmWave bands.
| Part Number | Description | Frequency (GHz) | Gain (dB) | Psat (dBm) | PAE (%) | Technology | Supply (V) | Package | Availability |
|---|---|---|---|---|---|---|---|---|---|
| FGN1722 | K-band GaN PA for SATCOM/Defense | 17-22 | 20 | 34-36 | 44 | GaN | 16-24 | QFN/Bare Die/Evaluation Board | In Stock |
| FCM2433 | Ka-band CMOS PA for 5G/mmWave | 24-33 | 21 | 19 | 52 | CMOS | 1.8 | Bare die/IP Solution | In Stock |
| FCM3242 | Q-band CMOS PA for 5G Beamforming | 32-42 | 21 | 19 | 45 | CMOS | 1.9 | Bare die/IP Solution | In Stock |
| FGN0407 | C-band GaN PA | 4.4-7.2 | 25 | 40/43 | 52 | GaN | 24 | QFN/Bare die/Evaluation Board | Coming Soon |
World Record Efficiency
Falcomm’s process agnostic Dual-Drive Power Amplifier architecture delivers world
record efficiency and enhanced thermal management, providing superior performance.



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Redefining Wireless Communication
Improving PA efficiency in an RF system from 30% to 50% results in:
Increasing PA power efficiency enhances system SwapC and widens coverage.
Full Turn-Key Solutions,
Fully Tested and Validated
From mass production RF components to custom design services, we are here to meet your mission.
Full Turn-Key Design

mmWave/RF Expertise

Testing, Verification, and Qualification

Semiconductor Manufacturing

Our technology is designed and manufactured in America.
Through partnerships with U.S. foundries and OSAT facilities, our domestic supply chain is ready to meet your needs.
Contact us
Have questions or interested in our products/ services? Reach out to our team:




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